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IGBT MODULE
MBN400C20
Silicon N-channel IGBT OUTLINE DRAWING
Unit in mm
FEATURES * High thermal fatigue durability. (delta Tc=70C,N>20,000cycles) * low noise due to built-in free-wheeling diode - ultra soft fast recovery diode(USFD). *High speed,low loss IGBT module. *Low driving power due to low input capacitance MOS gate. *High reliability,high durability module. * Isolated head sink (terminal to base).
Weight: 350 (g)
E E G C
TERMINALS
ABSOLUTE MAXIMUM RATINGS (Tc=25C ) Item
Collector Emitter Voltage Gate Emitter Voltage Collector Current Forward Current
Symbol
VCES VGES IC ICp IF IFM Pc Tj Tstg VISO -
Unit
V V A A W C C VRMS N.m
MBN400C20
2,000 20 400 800 400 800 3,000 -40 ~ +125 -40 ~ +125 4,000(AC 1 minute) 2/10 2.8
DC 1ms DC 1ms
Collector Power Dissipation Junction Temperature Storage Temperature Isolation Voltage Terminals(M4/M8) Screw Torque Mounting(M5)
(1) (2)
Notes: (1)Recommended Value 1.80.2/91N.m
(2)Recommended Value 2.60.2N.m
CHARACTERISTICS Item
(Tc=25C ) Symbol
I CES IGES VCE(sat) VGE(TO) Cies tr ton tf toff VFM trr
Unit
mA nA V V nF
Min.
4.0 -
Typ.
4.2 5.1 46 1.4 1.7 1.8 4.0 2.4 0.5
Max.
4.0 200 5.2 7.0 100 2.3 2.6 2.4 5.9 3.4 0.9
Test Conditions
Collector Emitter Cut-Off Current Gate Emitter Leakage Current Collector Emitter Saturation Voltage Gate Emitter Threshold Voltage Input Capacitance Rise Time Turn On Time Switching Times Fall Time Turn Off Time Peak Forward Voltage Drop Reverse Recovery Time
VCE=2,000V,VGE=0V VGE=20V,VCE=0V IC=400A,VGE=15V VCE=10V, IC =400mA VCE=10V,VGE=0V,f=100KHz VCC=1,000V,Ic=400A ms L=200nH RG=12W (3) VGE=15V Tc=125C -Ic=400A,VGE=0V V ms Vcc=1,000V,-Ic=400A,L=200nH, Tc=125C (4) C/W Thermal Impedance IGBT Rth(j-c) 0.033 Junction to case FWD Rth(j-c) 0.10 Notes:(3) RG value is the test condition's value for decision of the switching times, not recommended value. Determine the suitable RG value after the measurement of switching waveforms (overshoot voltage,etc.)with appliance mounted. (4) Counter arm IGBT VGE=-15V
PDE-N400C20-0
1000 Tc=25C
TYPICAL
VGE=15V 14V
1000 Tc=125C
TYPICAL
VGE=15V 13V 14V
Collector Current, Ic (A)
Collector Current, Ic (A)
12V
13V
12V
500
11V
500
11V
10V
10V 9V 8V 7V
9V
8V 7V
0
0
1
2
3
4
5
6
7
8
9
10
0 0
1
2
3
4
5
6
7
8
9
10
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
1000 VGE=0 Tc=25C Tc=125C TYPICAL
Collector to Emitter Voltage, VCE (V) Collector current vs. Collector to Emitter voltage
1000 [Conditions] VGE=0 f=100KHz Tc=25C 100 TYPICAL
Forward Current, IF (A)
Cies, Coes, Cres(nF)
Cies
500
10
Coes
1
Cres
0
0
1
2
3
4
5
0.1 0.1
1
10
100
Forward Voltage, VF (V) Forward voltage of free-wheeling diode
5 TYPICAL [Conditions] Tc=125C VCC=1000V Lp200nH RG(on)=12 RG(off)=12 VGE=15V Inductive Load 0.5
Collector to Emitter Voltage, VCE (V) Capacitance vs. Collector to Emitter Voltage
TYPICAL [Conditions] VCE Tc=125C VCC=1000V Lp200nH 0 0 RG(on)=12 RG(off)=12 VGE=15V Inductive Load
IC
Switching Time, td(on), tr, td(off), tf,trr (s)
10%
10% VGE
4
0.4
t1t3 t4 Eon(10%)= t3 t2 Eon(full)= t1
t4 t2
Turn-on Loss Eon (J/pulse)
IC VCE dt IC VCE dt
. .
3
0.3
td(off)
full
2
tf tr
0.2
10%
1
trr td(on)
0.1
0
0
100
200
300
400
500
0
0
100
200
300
400
500
Collector Current, IC(A) Switching time vs. Collector current
Collector Current IC (A) Turn-on Loss vs. Collector Current
PDE-N400C20-0
0.5
TYPICAL
0.5
TYPICAL [Conditions] Tc=125C VCC=1000V Lp200nH 0 RG(on)=12 RG(off)=12 VGE=15V Inductive Load
full
Reverse Recovery Loss Err (J/pulse)
VCE IRM IC t9 t11 t12 Err(10%)= Err(full)= t9 t11 t10 t12 t10 10% 0.1 IRM t
0.4
10%
0.4
Turn-off Loss Eoff (J/pulse)
. IC. VCE dt
IC VCE dt
0.3
0.3
full
0.2 [Conditions] Tc=125C VCC=1000V 0 Lp200nH 0 RG(on)=12 RG(off)=12 VGE=15V Inductive Load 0 100 200
IC VCE
0.2
10%
10% VGE
10%
t
0.1
0.1
t5 t7 Eoff(10%)= Eoff(full)=
. t7 t6 IC.VCE dt
t5
t8
t8 t6
IC VCE dt
0
300
400
500
0
0
100
200
300
400
500
Collector Current IC (A) Turn-off Loss vs. Collector Current
1
Collector Current IC (A) Reverse Recovery Loss vs. Collector Current
Transient Thermal Impedance, Rth(j-c) (C/W)
Diode 0.1 IGBT
0.01
0.001 0.001
0.01
0.1
1
10
Time, t (s) Transient thermal impedance
PDE-N400C20-0
HITACHI POWER SEMICONDUCTORS Notices
1.The information given herein, including the specifications and dimensions, is subject to change without prior notice to improve product characteristics. Before ordering, purchasers are adviced to contact Hitachi sales department for the latest version of this data sheets. 2.Please be sure to read "Precautions for Safe Use and Notices" in the individual brochure before use. 3.In cases where extremely high reliability is required(such as use in nuclear power control, aerospace and aviation, traffic equipment, life-support-related medical equipment, fuel control equipment and various kinds of safety equipment), safety should be ensured by using semiconductor devices that feature assured safety or by means of users' fail-safe precautions or other arrangement. Or consult Hitachi's sales department staff. 4.In no event shall Hitachi be liable for any damages that may result from an accident or any other cause during operation of the user's units according to this data sheets. Hitachi assumes no responsibility for any intellectual property claims or any other problems that may result from applications of information, products or circuits described in this data sheets. 5.In no event shall Hitachi be liable for any failure in a semiconductor device or any secondary damage resulting from use at a value exceeding the absolute maximum rating. 6.No license is granted by this data sheets under any patents or other rights of any third party or Hitachi, Ltd. 7.This data sheets may not be reproduced or duplicated, in any form, in whole or in part , without the expressed written permission of Hitachi, Ltd. 8.The products (technologies) described in this data sheets are not to be provided to any party whose purpose in their application will hinder maintenance of international peace and safety not are they to be applied to that purpose by their direct purchasers or any third party. When exporting these products (technologies), the necessary procedures are to be taken in accordance with related laws and regulations.
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